DocumentCode :
83178
Title :
High Drain Current Density E-Mode 
/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit  Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) on Si. The E-mode operation is due to the negative charges in the atomic layer deposited Al<sub>2</sub>O<sub>3</sub> layer. The unrecessed E-mode MOS-HEMTs exhibit high drain current density with a low specific ON-state resistance (R<sub>ON</sub>,<sub>sp</sub>) of 0.7 mΩ·cm<sup>2</sup>. A low gate leakage current showed enhancements in the subthreshold characteristics such as ION/IOFF ratio ~10<sup>8</sup> and subthreshold slope of 75 mV/decade. This E-mode device showed good retention characteristics of threshold voltage upto 10<sup>5</sup> s. Furthermore, the E-mode MOS-HEMT exhibits an OFF-state breakdown voltage of 532 V for short gate-to-drain distance (L<sub>gd</sub>=4 μm) that records a high power device figure of merit (FOM=BV<sup>2</sup>/R<sub>ON,sp</sub>) value of 4×10<sup>8</sup> V<sup>2</sup>Ω<sup>-1</sup>cm<sup>-2</sup>.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>III-V semiconductors; alumina; aluminium compounds; current density; gallium compounds; high electron mobility transistors; leakage currents; semiconductor device breakdown; wide band gap semiconductors; Al<sub>2</sub>O<sub>3</sub>-AlGaN-GaN; E-mode operation; OFF-state breakdown voltage; Si; atomic layer deposited Al<sub>2</sub>O<sub>3</sub> layer; distance 4 mum; enhancement-mode MOS-HEMT; high drain current density; leakage current; metal-oxide-semiconductor high-electron mobility transistors; retention characteristics; specific ON-state resistance; voltage 532 V; Aluminum gallium nitride; Aluminum oxide; Gallium nitride; HEMTs; Logic gates; MODFETs; Silicon; AlGaN/GaN; breakdown voltage; figure of merit (FOM); high drain current denstiy; high-<formula formulatype=)
$kappa~{rm Al}_{2}{rm O}_{3}$ ; subthreshold slope;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2276437
Filename :
6579632
Link To Document :
