Title :
Microwave reflection measurements on doped semiconductors with picosecond transient radiation
Author :
Robertson, W.M. ; Arjavalingam, G. ; Kopcsay, G.V. ; Halbout, J.M.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Broadband microwave reflection spectroscopy using the COMITS (coherent microwave transient spectroscopy) method is described. COMITS is particularly suited to reflection studies because the picosecond transient radiation emitted from planar antennas is strongly linearly polarized. The validity of the technique is verified by reflection measurements on isotropic and anisotropic dielectrics. Reflection studies on a series of doped silicon samples demonstrate that the carrier dynamics in the 15-140-GHz frequency range are well described by a simple Drude model.<>
Keywords :
microwave reflectometry; microwave spectroscopy; 15 to 140 GHz; COMITS; Drude model; EHF; SHF; anisotropic dielectrics; broadband microwave reflection spectroscopy; carrier dynamics; coherent microwave transient spectroscopy; doped semiconductors; frequency range; isotropic dielectrics; linearly polarized; picosecond transient radiation; planar antennas; reflection measurements; reflection studies; Anisotropic magnetoresistance; Antenna measurements; Dielectric measurements; Microwave measurements; Microwave theory and techniques; Planar arrays; Polarization; Reflection; Silicon; Spectroscopy;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
