Abstract :
A silicon-based III-V laser that lases up to a record 111°C, with a threshold current density of 200 A/cm2 and an output power exceeding 100 mW at room temperature, has been demonstrated by collaborating researchers from University College London (UCL) in the UK, and University of Arkansas in the US. This work could permit the creation of complex optoelectronic circuits, enabling chip-to-chip and system-to-system communications on Si substrates.
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical pumping; semiconductor lasers; silicon; III-V materials; InAlAs-GaAs; Si; chip-to-chip communications; complex optoelectronic circuits; electrically pumped lasers; laser operation; output power; power 100 mW; silicon photonics; silicon substrates; silicon-based laser; system-to-system communications; temperature 111 C; temperature 293 K to 298 K; threshold current density;
