Title :
Performance and reliability of InGaAsP superluminescent diode
Author :
Kashima, Yasumasa ; Matoba, Akio ; Takano, Hiroshi
Author_Institution :
OKI Electric Ind. Co. Ltd., Tokyo, Japan
fDate :
11/1/1992 12:00:00 AM
Abstract :
The performance and reliability of a 1.3-μm superluminescent diode (SLD) with a novel structure are reported. A window structure with a tapered active layer is applied to suppress lasing oscillation. A V-groove structure is introduced to achieve high coupling efficiency into a single-mode fiber. The design of optimized device dimensions allows SLD operation to be obtained even at 0°C. 1.3 mW is coupled into a single-mode fiber at 150 mA and 25°C. The spectral modulation depth is 15% over the entire emission spectral width of 32 nm. The operating life of a SLD has been estimated from the results of accelerated aging carried out for 5000 h at the ambient temperatures of 50 and 125°C. The activation energy of degradation is estimated to be 0.58 eV, and the extrapolated life is 106 h at an ambient temperature of 25°C
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; life testing; light emitting diodes; reliability; semiconductor device testing; superradiance; 0 degC; 1.3 mW; 1.3 micron; 125 degC; 150 mA; 25 degC; 50 degC; 5000 hrs; IR; InGaAsP; V-groove structure; accelerated aging; activation energy; ambient temperatures; degradation; emission spectral width; extrapolated life; fibre coupling; high coupling efficiency; operating life; optical modulation; optical windows; optimized device dimensions; reliability; semiconductors; single-mode fiber; spectral modulation depth; superluminescent diode; suppressed laser oscillation; tapered active layer; window structure; Accelerated aging; Design optimization; Indium phosphide; Life estimation; Optical fiber devices; Optical fiber sensors; Optical noise; Optical reflection; Superluminescent diodes; Temperature sensors;
Journal_Title :
Lightwave Technology, Journal of
