Title :
Intrinsic scattering and absorption losses of Ge- and F-doped optical fibres prepared by PCVD
Author :
Geittner, P. ; Leers, D.
Author_Institution :
Philips Res. Labs., Aachen, West Germany
fDate :
3/30/1989 12:00:00 AM
Abstract :
The scattering absorption and profile losses of PCVD fibres are analysed. The Rayleigh scattering increases proportionally to the sum of the F- and Ge-dopant concentrations, the UV absorption is proportional to the Ge concentration, and profiling losses are negligible.
Keywords :
Rayleigh scattering; chemical vapour deposition; optical fibres; optical losses; silicon compounds; PCVD fibres; Rayleigh scattering; SiO 2:Ge,F optical fibres; UV absorption; absorption losses; attenuation; intrinsic scattering losses; optical fibres; optical losses; profile losses; profiling losses;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890299
