• DocumentCode
    832664
  • Title

    Intrinsic scattering and absorption losses of Ge- and F-doped optical fibres prepared by PCVD

  • Author

    Geittner, P. ; Leers, D.

  • Author_Institution
    Philips Res. Labs., Aachen, West Germany
  • Volume
    25
  • Issue
    7
  • fYear
    1989
  • fDate
    3/30/1989 12:00:00 AM
  • Firstpage
    436
  • Lastpage
    437
  • Abstract
    The scattering absorption and profile losses of PCVD fibres are analysed. The Rayleigh scattering increases proportionally to the sum of the F- and Ge-dopant concentrations, the UV absorption is proportional to the Ge concentration, and profiling losses are negligible.
  • Keywords
    Rayleigh scattering; chemical vapour deposition; optical fibres; optical losses; silicon compounds; PCVD fibres; Rayleigh scattering; SiO 2:Ge,F optical fibres; UV absorption; absorption losses; attenuation; intrinsic scattering losses; optical fibres; optical losses; profile losses; profiling losses;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890299
  • Filename
    18497