Title :
Bias dependence of low-frequency gate current noise in GaAs MESFETs
Author :
Peransin, J.M. ; Rigaud, D.
Author_Institution :
Univ. des Sci. et Technol. du Languedoc, Montpellier, France
fDate :
3/30/1989 12:00:00 AM
Abstract :
The spectra of gate current noise are investigated in GaAs MESFETs between 102 and 104 Hz. A change in the white-noise behaviour is observed with the increase of the gate current. It is shown that the contribution of an ideal Schottky shot noise is associated with two thermal noise components. The thermal noise sources originate in different leakage conductances.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; semiconductor device models; 1/f noise; 100 to 10000 Hz; GaAs; MESFETs; bias dependence; gate current dependence; ideal Schottky shot noise; leakage conductances; low-frequency gate current noise; models; semiconductors; spectra of gate current noise; thermal noise components; thermal noise sources; white-noise behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890301
