Title :
RC-SCR: very-low-voltage ESD protection circuit in plain CMOS
Author :
Feng, H. ; Zhan, R. ; Wu, Q. ; Chen, G. ; Wang, A.Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
fDate :
9/12/2002 12:00:00 AM
Abstract :
A simple, novel RC-coupled very-low-voltage silicon controlled rectifier, electrostatic discharge protection circuit is reported, implemented in 0.35 μm CMOS, which is confirmed by transient electrostatic discharge simulation and measurement, and results in a very low triggering of 7 V, a 60% reduction over traditional silicon controlled rectifiers
Keywords :
CMOS analogue integrated circuits; RC circuits; electrostatic discharge; protection; thyristor circuits; trigger circuits; 0.35 micron; 7 V; RC-coupled SCR; plain CMOS; transient electrostatic discharge simulation; very low triggering; very-low-voltage ESD protection circuit; very-low-voltage silicon controlled rectifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020758
