Inductively Coupled Plasma-Assisted RF Magnetron Sputtering Deposition of Highly Uniform SiC Nanoislanded Films

Author

Cheng, Qijin ; Xu, S. ; Huang, Shiyong ; Long, Jidong ; Ren, Yuping ; Xu, Ming ; Ostrikov, Kostya

Author_Institution

Sch. of Phys., Sydney Univ., Sydney, NSW

Volume

36

Issue

4

fYear

2008

Firstpage

870

Lastpage

871

Abstract

A new deposition technique - inductively coupled plasma-assisted RF magnetron sputtering has been developed to fabricate SiC nanoislanded films. In this system, the plasma production and magnetron sputtering can be controlled independently during the discharge. The deposited SiC nanoislanded films are highly uniform, have excellent stoichiometry, have a typical size of 10-45 nm, and contain small (~6 nm) cubic SiC nanocrystallites embedded in an amorphous SiC matrix.

Keywords

crystallites; plasma deposition; semiconductor growth; semiconductor thin films; silicon compounds; sputter deposition; stoichiometry; wide band gap semiconductors; RF magnetron sputtering deposition; SiC; amorphous matrix; inductively coupled plasma-assisted deposition; nanocrystallites; nanoislanded films; plasma production; size 10 nm to 45 nm; stoichiometry; Amorphous magnetic materials; Couplings; Physics; Plasma density; Plasma temperature; Radio frequency; Saturation magnetization; Scanning electron microscopy; Silicon carbide; Sputtering; Inductively coupled plasma (ICP); magnetron sputtering; nanoislanded SiC;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2008.927350

Filename

4598951