Title :
Direct optical injection locking of 96 GHz InP/InGaAs HPT oscillator IC using DSB-SC modulated lightwave
Author :
Karnitsuna, H. ; Shibata, T. ; Kurishima, K. ; Ida, M.
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
fDate :
9/12/2002 12:00:00 AM
Abstract :
96 GHz optical injection locking with a locking range of 113 MHz has been obtained from an InP/InGaAs heterojunction phototransistor oscillator IC photocoupled through the substrate by using the lightwave from a Mach-Zehnder modulator driven by double sideband modulation with suppressed carriers. Phase noise is less than -69.3 and -90.3 dBc/Hz at 10 and 100 kHz-off carrier, respectively, at around 96.4 GHz
Keywords :
III-V semiconductors; bipolar analogue integrated circuits; electro-optical modulation; gallium arsenide; heterojunction bipolar transistors; indium compounds; injection locked oscillators; integrated circuit noise; integrated optoelectronics; phase noise; phototransistors; 96.4 GHz; DSB-SC modulated lightwave; InP-InGaAs; InP/InGaAs HPT oscillator IC; InP/InGaAs heterojunction phototransistor oscillator IC; Mach-Zehnder modulator; direct optical injection locking; double sideband modulation; locking range; phase noise; substrate photocoupling; suppressed carrier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020680
