Application of the rapid thermal process: sintering the sputtered aluminum/silicon contact in silicon detector fabrication

Author

Chen, Wei ; Li, Zheng ; Kraner, H.W.

Author_Institution

Brookhaven Nat. Lab., Upton, NY, USA

Volume

39

Issue

4

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

558

Lastpage

562

Abstract

Rapid thermal process (RTP) sintering of aluminum metallization has been used in p⁺-n junction detector fabrication. For the same thickness of aluminum film and at the same RTP sintering condition, the leakage current of the p⁺-n junction detectors with sputtered Al metallization showed at least a 50% improvement after sintering, and no spiking phenomena were observed compared to the detectors with evaporated Al contacts. RTP sintering in 4% H₂/N₂ ambient passivates the defects introduced by sputtering and the damage caused by the ⁶⁰Co irradiation

Keywords

semiconductor counters; silicon; sintering; ⁶⁰Co irradiation; Al film thickness; H₂/N₂ ambient; RTP sintering condition; Si; evaporated Al contacts; leakage current; p⁺-n junction detector fabrication; rapid thermal process; sintering; spiking phenomena; sputtered Al metallization; sputtered Al/Si contact; Aluminum alloys; Conductivity; Detectors; Leakage current; Metallization; Rapid thermal processing; Semiconductor counters; Silicon alloys; Sputtering; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.159665

Filename

159665