Title :
Pattern-effect-free semiconductor optical amplifier achieved using quantum dots
Author :
Akiyama, T. ; Hatori, N. ; Nakata, Y. ; Ebe, H. ; Sugawara, M.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
9/12/2002 12:00:00 AM
Abstract :
It is experimentally shown that the pattern effect inherent in semiconductor optical amplifiers can be eliminated by using self-assembled quantum dots in the active region. This property comes from the ultrafast response of the dominant gain nonlinearity, or spectral-hole burning, which can respond as fast as < 3 ps due to intra-dot carrier relaxation, thereby enabling operation up to 160 Gbit/s
Keywords :
high-speed optical techniques; optical hole burning; self-assembly; semiconductor optical amplifiers; semiconductor quantum dots; 160 Gbit/s; 3 ps; SOA active region; dominant gain nonlinearity; gain saturation characteristics; intra-dot carrier relaxation; pattern-effect-free SOA; self-assembled quantum dots; semiconductor optical amplifier; spectral-hole burning; ultrafast response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020716
