Title :
High-speed and low-drive-voltage monolithic multiple quantum-well modulator/DFB laser light source
Author :
Wakita, Koichi ; Kotaka, Isamu ; Asai, Hiromitsu ; Okamoto, Minoru ; Kondo, Yasuhiro ; Naganuma, Mitsuru
Author_Institution :
NTT Opto-electron. Lab., Kanagawa, Japan
Abstract :
Monolithic integration of an InGaAsP/InGaAs multiple quantum well (MQW) distributed-feedback (DFB) laser with a high-speed InGaAs/InAlAs MQW intensity modulator is demonstrated. A 3-dB bandwidth. in excess of 16 GHz and low-drive-voltage operation (4.0 V) for a 20-dB on-off ratio are obtained. Good coupling efficiency between an MQW DFB laser and an MQW modulator is accomplished using hybrid crystal growth of MO-VPE and MBE.<>
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical devices; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; molecular beam epitaxial growth; optical modulation; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 4.0 V; III-V semiconductor; InGaAs-InAlAs; InGaAsP-InGaAs; MBE; MO-VPE; MQW DFB laser; bandwidth; coupling efficiency; high-speed InGaAs/InAlAs MQW intensity modulator; hybrid crystal growth; monolithic integration; on-off ratio; Bandwidth; Dry etching; Indium gallium arsenide; Intensity modulation; Light sources; Molecular beam epitaxial growth; Monolithic integrated circuits; Optical modulation; Quantum well devices; Quantum well lasers;
Journal_Title :
Photonics Technology Letters, IEEE
