Title :
Cd1-xZnxTe gamma ray detectors
Author :
Butler, J.F. ; Lingren, C.L. ; Doty, F.P.
Author_Institution :
Aurora Technologies Corp., San Diego, CA, USA
fDate :
8/1/1992 12:00:00 AM
Abstract :
The results of an effort to improve the performance at CdTe detectors by addressing starting element purity and crystallinity are described. Structural perfection was improved by alloying with ZnTe to form crystals of Cd1-xZnxTe. Crystals were grown by a high-pressure Bridgman method. Evidence for significant enhancements of the μτ products resulting from these efforts is presented. Features of Cd0.8Zn0.2Te detectors include: energy resolutions at 122 keV<7%; resistivity approximately 1011 ohm-cm; no polarization effects: and temperature for useful operation up to 100°C. The large sizes and excellent homogeneity of the crystals make it possible to produce detectors and imaging arrays with areas of several square inches
Keywords :
gamma-ray detection and measurement; semiconductor counters; Cd1-xZnxTe gamma ray detectors; CdTe detectors; crystallinity; excellent homogeneity; high-pressure Bridgman method; imaging arrays; polarization; starting element purity; Alloying; Conductivity; Crystallization; Crystals; Detectors; Energy resolution; Polarization; Tellurium; Temperature; Zinc compounds;
Journal_Title :
Nuclear Science, IEEE Transactions on
