Title :
Influence of free carrier plasma effect on carrier-induced refractive index change for quantum-well lasers
Author :
Murata, S. ; Tomita, A. ; Suzuki, A.
Author_Institution :
NEC Corp., Tsukuba, Japan
Abstract :
The influence of the free carrier component due to the plasma effect on carrier-induced refractive index change and its dependency on polarization for multiple-quantum-well (MQW) and bulk lasers are experimentally studied. The ratios of the component to the total index change, R/sub fc/, are 0.6, 0.4, and 0.1 for 1.3- mu m MQW, 1.3- mu m bulk, and 0.8- mu m MQW lasers, respectively. The TM/TE polarization ratios of the component, R/sub TM/TE/, are 0.8 and 0.3 for 1.3- mu m MQW and 0.8- mu m MQW lasers. The relationship between the index change and the carrier overflow (to barrier and separate confinement heterostructure layers) for MQW lasers is also discussed. Large R/sub fc/ and R/sub TM/TE/ for the 1.3- mu m MQW laser result from the carrier overflow.<>
Keywords :
light polarisation; refractive index; semiconductor lasers; solid-state plasma; 0.8 micron; 1.3 micron; MQW lasers; TM/TE polarization ratios; barrier layers; bulk lasers; carrier overflow; carrier-induced refractive index change; free carrier plasma effect; polarization; quantum-well lasers; separate confinement heterostructure layers; Distributed feedback devices; Laser modes; Laser transitions; Plasma measurements; Polarization; Quantum well devices; Quantum well lasers; Quantum wells; Refractive index; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
