• DocumentCode
    833087
  • Title

    Compton recoil electron tracking with silicon strip detectors

  • Author

    O´Neill, T.J. ; Ait-Ouamer, F. ; Schwartz, I. ; Tumer, O.T. ; White, R.S. ; Zych, A.D.

  • Author_Institution
    Inst. of Geophys. & Planetary Phys., California Univ., Riverside, CA, USA
  • Volume
    39
  • Issue
    4
  • fYear
    1992
  • fDate
    8/1/1992 12:00:00 AM
  • Firstpage
    629
  • Lastpage
    634
  • Abstract
    The application of silicon strip detectors to Compton gamma ray astronomy telescopes is described. The silicon Compton recoil telescope tracks Compton recoil electrons in silicon strip converters to provide an unique direction for Compton scattered gamma rays above 1 MeV. With strip detectors of modest positional and energy resolutions, of 1 mm FWHM and 3% at 662 keV, respectively, true imaging can be achieved to provide an order of magnitude improvement in sensitivity to 1.6×10 -6 γ/cm2-s at 2 MeV. The results of extensive Monte Carlo calculations of recoil electrons traversing multiple layers of 200 μm silicon wafers are presented. Multiple Coulomb scattering of the recoil electron in the silicon wafer of the Compton interaction and the next adjacent wafer is the basic limitation to determining the electron´s initial direction
  • Keywords
    Monte Carlo methods; elemental semiconductors; gamma-ray astronomy; gamma-ray detection and measurement; semiconductor counters; silicon; Compton gamma ray astronomy telescopes; Compton recoil electron tracking; Compton recoil telescope; Compton scattered gamma rays; Si strip detectors; energy resolutions; extensive Monte Carlo calculations; multiple layers; sensitivity; true imaging; Astronomy; Electrons; Energy resolution; Gamma ray detection; Gamma ray detectors; Gamma rays; Scattering; Silicon; Strips; Telescopes;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.159677
  • Filename
    159677