Nonlinear second-order susceptibilities of asymmetric and electric-field-controlled multiple-quantum-well structures

Author

Lue, Juh-Tzeng ; Ma, Kuan-Wei

Author_Institution

Dept. of Phys., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

5

Issue

1

fYear

1993

Firstpage

37

Lastpage

40

Abstract

Optical second-order reflectances for asymmetric multiple-quantum-well structures of Ga/sub 1-x/Al/sub x/ As/GaAs compounds are measured by pumping with a Q-switched and mode-locked Nd:YAG laser at a wavelength of 1.06 mu m. No enhancement of the second-order susceptibility is detected from the interband and off-resonant absorption. Upon increasing the doping concentration, the second-harmonic signal decreases and even disappears at high doping. These experimental results are not in accordance with theoretical predictions.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical effects; gallium arsenide; nonlinear optical susceptibility; optical harmonic generation; reflectivity; semiconductor quantum wells; 1.06 micron; GaAlAs-GaAs; III-V semiconductor; Q-switched laser pump; YAG:Nd; YAl5O12:Nd; asymmetric MQW; doping concentration; electric-field-controlled multiple-quantum-well structures; interband absorption; mode-locked Nd:YAG laser; nonlinear second order susceptibilities; off-resonant absorption; optical second order reflectances; second-harmonic signal; Doping; Gallium arsenide; Laser excitation; Laser mode locking; Laser theory; Nonlinear optics; Optical pumping; Q measurement; Quantum well devices; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.185053

Filename

185053