Title :
Linear, high-speed, high-power strained quantum-well LEDs
Author :
Ettenberg, M. ; Harvey, M.G. ; Patterson, D.R.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
InGaAs/AlGaAs edge-emitting LEDs are shown to be efficient (4% quantum efficiency), linear over four decades of current, and capable of operating in a analog or digital mode at modulation bandwidths exceeding 500 MHz. The spectral width of these LEDs is on the order of 700 AA at the 3-dB intensity points. The device is suited for high-speed backplane and short-distance local area network applications, where fiber dispersion is inconsequential. It appears to be a competitive optical power source for a variety of advanced applications, with speed and power outputs approaching those of laser diodes, but without the complication of a threshold current and associated active stabilization circuitry.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light emitting diodes; optical communication equipment; semiconductor quantum wells; III-V semiconductor; InGaAs-AlGaAs; analog mode; digital mode; edge emitting LED; fiber dispersion; high speed backplane LAN; linear high speed high power strained quantum well LED; modulation bandwidths; optical power source; quantum efficiency; short-distance local area network; spectral width; Backplanes; Bandwidth; Digital modulation; High speed optical techniques; Indium gallium arsenide; Light emitting diodes; Optical fiber LAN; Optical fiber devices; Optical modulation; Quantum wells;
Journal_Title :
Photonics Technology Letters, IEEE
