Title :
Thermal Analysis of High-Power InGaAs–InP Photodiodes
Author :
Duan, Ning ; Wang, Xin ; Li, Ning ; Liu, Han-Din ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA
Abstract :
InGaAs-InP charge-compensated unitraveling-carrier photodiodes with thick depletion region are demonstrated. A 40-mum-diameter photodiode achieved 10-GHz bandwidth and 24.5dBm RF output power. A 100-mum-diameter photodiode achieved bandwidth of 2 GHz and 29 dBm RF output power. Simulation of the temperature distribution in devices is also presented
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; temperature distribution; 10 GHz; 100 mum; 2 GHz; 40 mum; InGaAs-InP; InGaAs-InP photodiodes; charge compensation; temperature distribution; unitraveling-carrier photodiodes; Bandwidth; Dark current; Microwave antennas; Microwave photonics; Photoconductivity; Photodetectors; Photodiodes; Power generation; Radio frequency; Temperature distribution; Frequency response; heating; high power photodetectors; photocurrent; photodetectors; photodiodes; saturation current; space-charge effect; thermal factors;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2006.883498
