DocumentCode :
83335
Title :
Electrical Characterization and Materials Stability Analysis of 
Composite Oxides on n-  capacitor application. The composite oxide was formed by depositing five layers of La<sub>2</sub>O<sub>3</sub>(0.8 nm)/HfO<sub>2</sub>(0.8 nm) on InGaAs with post deposition annealing at 500°C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (D<sub>it</sub>) of 7.0×10<sup>11</sup> cm<sup>-2</sup>eV<sup>-1</sup>, small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>III-V semiconductors; MOS capacitors; annealing; gallium arsenide; hafnium; high-k dielectric thin films; indium compounds; interface states; lanthanum compounds; leakage currents; In<sub>0.53</sub>Ga<sub>0.47</sub>As; La<sub>2</sub>O<sub>3</sub>-HfO<sub>2</sub>; MOS capacitors; annealing temperature; composite oxides; electrical characterization; high-k composite oxide; interface trap density; inversion behavior; leakage current; low-capacitance equivalent thickness; material stability analysis; metal-oxide-semiconductor capacitor application; post deposition annealing; Aluminum oxide; Annealing; Hafnium compounds; Leakage currents; Logic gates; MOS capacitors; Materials; <formula formulatype=)
${rm HfO}_{2}$ ; ${rm La}_{2}{rm O}_{3}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2272083
Filename :
6579646
Link To Document :
