A low-noise, wideband, integrated CMOS transimpedance preamplifier for photodiode applications

Author

Binkley, David M. ; Rochelle, James M. ; Paulus, Michael J. ; Casey, Michael E.

Author_Institution

CTI PET Systems, Inc., Knoxville, TN, USA

Volume

39

Issue

4

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

747

Lastpage

752

Abstract

A low-noise, wideband, integrated CMOS transimpedance preamplifier is presented for silicon avalanche photodiode (APD) applications. The preamplifier, fabricated in a standard 2-μm CMOS technology, features a transimpedance gain of 45 kΩ, a risetime of 22 ns, a series noise of 1.6 nV/Hz^1/2, and a wideband equivalent input-noise current of 12 nA for a source capacitance of 12 pF. The measured ²²Na timing resolution of 9.2-ns FWHM and energy resolution of 22.4% FWHM for the RCA C30994 bismuth germanate (BGO)/APD detector module coupled to the preamplifier was comparable to the performance reported using charge-sensitive preamplifiers. This illustrates that transimpedance preamplifiers should be considered for APD applications, especially where APD noise current dominates noise from feedback resistors in the 10-kΩ to 50-kΩ range

Keywords

CMOS integrated circuits; avalanche photodiodes; linear integrated circuits; nuclear electronics; preamplifiers; scintillation counters; wideband amplifiers; 10 to 50 kohm; 12 pF; 2 micron; 22 ns; 9.2 ns; ²²Na timing resolution; BGO-photodiode system; Bi₄Ge₃O₁₂; RCA C30994; avalanche photodiode; energy resolution; integrated CMOS transimpedance preamplifier; low noise wideband preamplifier; noise current; photodiode applications; Avalanche photodiodes; CMOS technology; Capacitance; Current measurement; Energy measurement; Energy resolution; Preamplifiers; Silicon; Timing; Wideband;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.159699

Filename

159699