Optically generated 60 GHz millimeter waves using AlGaAs/InGaAs HEMTs integrated with both quasi-optical antenna circuits and MMICs

Author

Plant, D.V. ; Scott, D.C. ; Fetterman, H.R. ; Shaw, L.K. ; Jones, W. ; Tan, K.L.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

4

Issue

1

fYear

1992

Firstpage

102

Lastpage

105

Abstract

Continuously tunable 49-67 GHz millimeter wave radiation has been generated using optical mixing in AlGaAs/InGaAs HEMTs integrated with both quasi-optical antenna circuits and multistage MMIC amplifiers. Using these systems, microwatt levels of millimeter wave power have been generated. A quantitative study of the signal strength versus bias, polarization, and light intensity was performed. In addition, the millimeter waves were modulated by applying an RF signal (< GHz) to the FET gate. Using this technique, tunable electrical sidebands were added to the optically generated 60 GHz carrier, thus providing a method of transmitting information.<>

Keywords

III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; microstrip antennas; solid-state microwave circuits; 49 to 67 GHz; 60 GHz; AlGaAs-InGaAs; EHF; FET gate; HEMTs; MM wave modulation; MM waves; RF signal; bias; high electron mobility transistors; information transmission; light intensity; microwatt levels; millimeter wave power; millimeter waves; multistage MMIC amplifiers; optical mixing; optically generated carriers; polarization; quasi-optical antenna circuits; semiconductors; signal strength; tunable electrical sidebands; tunable radiation; HEMTs; Indium gallium arsenide; MMICs; MODFETs; Millimeter wave integrated circuits; Millimeter wave technology; Optical mixing; Semiconductor optical amplifiers; Stimulated emission; Tunable circuits and devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.124891

Filename

124891