Title :
Electroptic diffraction modulation in ZnO film on sapphire
Author :
Wu, Mu-Shiang ; Shiosaki, Tadashi ; Kawabata, Akira
Author_Institution :
Tatung Inst. of Technol., Taipei, Taiwan
fDate :
3/1/1989 12:00:00 AM
Abstract :
An electrooptic Bragg diffraction modulator with high diffraction efficiency which utilizes a low-loss epitaxial ZnO optical waveguide on a sapphire substrate is discussed. An interdigital electrode with a spatial period of 20 mu m and an aperture of 3 mm was fabricated directly on the film surface using a photolithographic technique. For the TE/sub 0/ mode at 6328 AA, a maximum diffraction efficiency of 98% has been obtained from DC to 100 kHz with an applied voltage of about 31 V. The unclamped electrooptic coefficient r/sub 33/ is estimated to be 5.8*10/sup -12/ m/V which is much larger than the clamped value of 2.6*10/sup -12/ m/V in the literature.<>
Keywords :
electro-optical devices; optical modulation; optical waveguides; sapphire; substrates; zinc compounds; 31 V; 6328 AA; Al/sub 2/O/sub 3/; TE/sub 0/ mode; ZnO; ZnO-Al/sub 2/O/sub 3/; electrooptic Bragg diffraction modulator; electrooptic coefficient; interdigital electrode; photolithographic technique; Apertures; Electrodes; Electrooptic modulators; Electrooptical waveguides; Optical diffraction; Optical films; Optical modulation; Optical waveguides; Substrates; Zinc oxide;
Journal_Title :
Quantum Electronics, IEEE Journal of
