Electroptic diffraction modulation in ZnO film on sapphire

Author

Wu, Mu-Shiang ; Shiosaki, Tadashi ; Kawabata, Akira

Author_Institution

Tatung Inst. of Technol., Taipei, Taiwan

Volume

25

Issue

3

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

252

Lastpage

256

Abstract

An electrooptic Bragg diffraction modulator with high diffraction efficiency which utilizes a low-loss epitaxial ZnO optical waveguide on a sapphire substrate is discussed. An interdigital electrode with a spatial period of 20 mu m and an aperture of 3 mm was fabricated directly on the film surface using a photolithographic technique. For the TE/sub 0/ mode at 6328 AA, a maximum diffraction efficiency of 98% has been obtained from DC to 100 kHz with an applied voltage of about 31 V. The unclamped electrooptic coefficient r/sub 33/ is estimated to be 5.8*10/sup -12/ m/V which is much larger than the clamped value of 2.6*10/sup -12/ m/V in the literature.<>

Keywords

electro-optical devices; optical modulation; optical waveguides; sapphire; substrates; zinc compounds; 31 V; 6328 AA; Al/sub 2/O/sub 3/; TE/sub 0/ mode; ZnO; ZnO-Al/sub 2/O/sub 3/; electrooptic Bragg diffraction modulator; electrooptic coefficient; interdigital electrode; photolithographic technique; Apertures; Electrodes; Electrooptic modulators; Electrooptical waveguides; Optical diffraction; Optical films; Optical modulation; Optical waveguides; Substrates; Zinc oxide;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.18537

Filename

18537