Title :
10 Gbit/s transmitter based on directly modulated InGaAlAs laser operating up to 126°C
Author :
Paiella, R. ; Kiely, P.A. ; Ougazzaden, A. ; Stayt, J.W., Jr ; Sirenko, A. ; Derkits, G. ; Glogovsky, K. ; Wamsley, C.C. ; Lentz, C.W. ; Eng, L.E. ; Ketelsen, L.J.P.
Abstract :
High-performance operation of a 10 Gbit/s optical transmitter based on a directly modulated InGaAlAs Fabry-Perot laser, in the laser temperature range of -1 to 126°C, is demonstrated. Clear open eye diagrams are obtained over this entire range, with margins greater than 5%, and with minimal variations in output power and extinction ratio
Keywords :
III-V semiconductors <directly modulated InGaAlAs laser operating up, 126°C, 10 Gbit/s transmitter>; aluminium compounds <directly modulated InGaAlAs laser operating up, 126°C, 10 Gbit/s transmitter>; gallium arsenide <directly modulated InGaAlAs laser operating up, 126°C, 10 Gbit/s transmitter>; indium compounds <directly modulated InGaAlAs laser operating up, 126°C, 10 Gbit/s transmitter>; optical transmitters <directly modulated InGaAlAs laser operating up, 126°C, 10 Gbit/s transmitter>; quantum well lasers <directly modulated InGaAlAs laser operating up, 126°C, 10 Gbit/s transmitter>; 10 Gbit/s; 126 C; Fabry Perot laser; InGaAlAs; MQW lasers; average optical output power; directly modulated laser; extinction ratio; high-performance operation; high-temperature performance; modulation-efficiency; open eye diagrams; optical transmitter; slope efficiency; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031062
