DocumentCode
833932
Title
Convolution-based global simulation technique for millimeter-wave photodetector and photomixer circuits
Author
Ameen, David B. ; Tait, Gregory B.
Author_Institution
Dept. of Phys., Virginia Commonwealth Univ., Richmond, VA, USA
Volume
50
Issue
10
fYear
2002
fDate
10/1/2002 12:00:00 AM
Firstpage
2253
Lastpage
2258
Abstract
A fast convolution-based time-domain approach to global photonic-circuit simulation is presented that incorporates a physical device model in the complete detector or mixer circuit. The device used in the demonstration of this technique is a GaAs metal-semiconductor-metal (MSM) photodetector that offers a high response speed for the detection and generation of millimeter waves. Global simulation greatly increases the accuracy in evaluating the complete circuit performance because it accounts for the effects of the millimeter-wave embedding circuit. Device and circuit performance are assessed by calculating optical responsivity and bandwidth. Device-only simulations using GaAs MSMs are compared with global simulations that illustrate the strong interdependence between device and external circuit.
Keywords
circuit simulation; convolution; equivalent circuits; gallium arsenide; metal-semiconductor-metal structures; microwave photonics; millimetre wave detectors; millimetre wave mixers; photodetectors; time-domain analysis; GaAs; GaAs MSM photodetector; MM-wave embedding circuit; bandwidth; convolution-based global simulation; convolution-based time-domain approach; global photonic-circuit simulation; millimeter-wave photodetector; optical responsivity; photomixer; physical device model; Circuit optimization; Circuit simulation; Detectors; Gallium arsenide; Millimeter wave circuits; Millimeter wave devices; Millimeter wave technology; Optical devices; Photodetectors; Time domain analysis;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2002.803436
Filename
1038863
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