Title :
Gamma Irradiation Insensitivity of GaAs Schottky Diodes
Author :
Ashok, S. ; Borrego, J.M. ; Gutmann, R.J.
Author_Institution :
Electrical and Systems Engineering Department Rensselaer Polytechnic Institute Troy, New York 12181
fDate :
4/1/1978 12:00:00 AM
Abstract :
Guarded Al-and Au-nGaAs Schottky barrier diodes were subjected to Co60 ¿-ray irradiation and their electrical characteristics evaluated. These GaAs Schottkys did not exhibit significant change in their I-V and C-V characteristics up to an absorbed dose as high as 1.5 × 107 rads. Diodes that were previously neutron-irradiated with consequent degradation were also subjected to Co60 irradiation, but no synergistic changes were observed.
Keywords :
Capacitance-voltage characteristics; Degradation; Electric variables; Gallium arsenide; Gold; Ionizing radiation; Metallization; Schottky barriers; Schottky diodes; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1978.4329446
