Room temperature, continuous-wave lasing near 1300 nm in microdisks with quantum dot active regions

Author

Yang, Tian ; Shchekin, O. ; O´Brien, J.D. ; Deppe, D.G.

Author_Institution

Dept. of Electr. Eng.Electrophys., Univ. of Southern California, Los Angeles, CA, USA

Volume

39

Issue

23

fYear

2003

Abstract

Room temperature, optically-pumped, continuous-wave lasing near 1300 nm in microdisk resonant cavities with InAs quantum dot active regions is reported for the first time. Lasing occurred in devices with diameters between 6 and 7 μm with incident threshold pumping powers as low as 2 mW

Keywords

III-V semiconductors <RT, CW lasing near 1300 nm, microdisks, QD act. regions>; indium compounds <RT, CW lasing near 1300 nm, microdisks, QD act. regions>; laser cavity resonators <RT, CW lasing near 1300 nm, microdisks, QD act. regions>; laser modes <RT, CW lasing near 1300 nm, microdisks, QD act. regions>; microdisc lasers <RT, CW lasing near 1300 nm, microdisks, QD act. regions>; optical pumping <RT, CW lasing near 1300 nm, microdisks, QD act. regions>; quantum dot lasers <RT, CW lasing near 1300 nm, microdisks, QD act. regions>; 1300 nm; InAs; continuous-wave lasing; epitaxial structure; microdisk resonant cavities; multimode lasing; optically-pumped; quantum dot active regions; room temperature lasing; small mode volume microdisks;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20031058

Filename

1248972