Room temperature laser operation of strained InGaAs/GaAs QW structure monolithically grown by MOCVD on LE-PECVD Ge/Si virtual substrate

Author

Chriqui, Y. ; Saint-Girons, G. ; Bouchoule, S. ; Moison, J.-M. ; Isella, G. ; von Kaenel, H. ; Sagnes, I.

Author_Institution

Lab. de Photonique et de Nanostructures L.P.N., Marcoussis, France

Volume

39

Issue

23

fYear

2003

Firstpage

1658

Lastpage

1660

Abstract

Th first successful realisation of MOVPE grown strained InGaAs/GaAs long-wavelength quantum well (QW) laser structures integrated on Si substrates via strained relaxed Ge/GeSi buffer layers is reported. Room temperature (RT) operation at an emission wavelength of 1.04 μm was obtained from broad area devices. Identical control laser diodes grown on bulk germanium substrates showed similar threshold current density, demonstrating the potential of Ge/Si-virtual substrate (VS) for monolithic integration of long-wavelength GaAs-based lasers on Si.

Keywords

III-V semiconductors; MOCVD; atomic layer epitaxial growth; gallium arsenide; indium compounds; optical interconnections; quantum well lasers; 1.04 micron; InGaAs-GaAs; LE-PECVD virtual substrate; MOCVD; Si; atomic layer epitaxy; broad area devices; long-wavelength laser structures; monolithic integration; optical interconnects; room temperature laser operation; strained quantum well; strained relaxed buffer layers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20030926

Filename

1248974