DocumentCode :
833996
Title :
A reduced-size silicon micromachined high-Q resonator at 5.7 GHz
Author :
Tavernier, Christophe A. ; Henderson, Rashaunda M. ; Papapolymerou, John
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
Volume :
50
Issue :
10
fYear :
2002
fDate :
10/1/2002 12:00:00 AM
Firstpage :
2305
Lastpage :
2314
Abstract :
This paper depicts the progress toward a novel high-quality-factor miniaturized resonator operating in the 5.6-5.8-GHz range. The design of the resonator is based on a micromachined cavity loaded with a high dielectric-constant material. Energy is coupled into the cavity from input and output microstrip lines via slots. Quality factors up to 640 are demonstrated on silicon planar structures with a volume of 177 mm3. Further size reduction yields a volume of 24.5 mm3 and quality factors ranging from 152 to 197, while keeping the resonator integration ability. Bonding techniques and the dielectric loss of the loading material are proven to be the limiting factors in achieving higher quality factors.
Keywords :
Q-factor; cavity resonators; elemental semiconductors; micromachining; microwave devices; silicon; 5.6 to 5.8 GHz; Si; Si micromachined high-Q resonator; Si planar structures; bonding techniques; dielectric loss; high dielectric-constant material loaded cavity; high quality factor resonator; input microstrip lines; micromachined cavity; miniaturized resonator; output microstrip lines; slots; Acoustic waveguides; Band pass filters; Broadband communication; Circuits; Dielectric losses; Dielectric materials; Frequency; Q factor; Silicon; Wireless communication;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2002.803428
Filename :
1038869
Link To Document :
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