• DocumentCode
    833996
  • Title

    A reduced-size silicon micromachined high-Q resonator at 5.7 GHz

  • Author

    Tavernier, Christophe A. ; Henderson, Rashaunda M. ; Papapolymerou, John

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
  • Volume
    50
  • Issue
    10
  • fYear
    2002
  • fDate
    10/1/2002 12:00:00 AM
  • Firstpage
    2305
  • Lastpage
    2314
  • Abstract
    This paper depicts the progress toward a novel high-quality-factor miniaturized resonator operating in the 5.6-5.8-GHz range. The design of the resonator is based on a micromachined cavity loaded with a high dielectric-constant material. Energy is coupled into the cavity from input and output microstrip lines via slots. Quality factors up to 640 are demonstrated on silicon planar structures with a volume of 177 mm3. Further size reduction yields a volume of 24.5 mm3 and quality factors ranging from 152 to 197, while keeping the resonator integration ability. Bonding techniques and the dielectric loss of the loading material are proven to be the limiting factors in achieving higher quality factors.
  • Keywords
    Q-factor; cavity resonators; elemental semiconductors; micromachining; microwave devices; silicon; 5.6 to 5.8 GHz; Si; Si micromachined high-Q resonator; Si planar structures; bonding techniques; dielectric loss; high dielectric-constant material loaded cavity; high quality factor resonator; input microstrip lines; micromachined cavity; miniaturized resonator; output microstrip lines; slots; Acoustic waveguides; Band pass filters; Broadband communication; Circuits; Dielectric losses; Dielectric materials; Frequency; Q factor; Silicon; Wireless communication;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2002.803428
  • Filename
    1038869