Noise spectral density measurements of a radiation hardened CMOS process in the weak and moderate inversion

Author

Tedja, S. ; Williams, H.H. ; Van der Spiegel, J. ; Newcomer, F.M. ; Van Berg, R.

Author_Institution

Pennsylvania Univ., Philadelphia, PA, USA

Volume

39

Issue

4

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

804

Lastpage

808

Abstract

The authors have measured the noise of MOS transistors of the United Technology Microelectronics Center (UTMC) 1.2-μm radiation-hardened CMOS P-well process from the weak to moderate inversion region. The noise power spectral densities of both NMOS and PMOS devices were measured from 1 kHz to 50 MHz. The bandwidth was chosen such that the important components of the spectral densities such as the white thermal noise and the 1/f noise could be easily resolved and analyzed in detail. The effects of different device terminal DC biases and channel geometries on the noise are described

Keywords

CMOS integrated circuits; electric noise measurement; nuclear electronics; random noise; semiconductor device noise; white noise; 1 kHz to 50 MHz; 1/f noise; MOS transistors; NMOS; P-well process; PMOS; UTMC; United Technology Microelectronics Center; bandwidth; channel geometries; device terminal DC biases; moderate inversion; noise; radiation hardened CMOS process; spectral densities; weak inversion; white thermal noise; Bandwidth; CMOS process; CMOS technology; Density measurement; MOS devices; MOSFETs; Microelectronics; Noise measurement; Power measurement; Radiation hardening;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.159711

Filename

159711