Title :
80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax
Author :
Koester, S.J. ; Saenger, K.L. ; Chu, J.O. ; Ouyang, Q.C. ; Ott, J.A. ; Rooks, M.J. ; Canaperi, D.F. ; Tornello, J.A. ; Jahnes, C.V. ; Steen, S.E.
Abstract :
DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed fmax=194 GHz (175 GHz) and fT=70 GHz (79 GHz)
Keywords :
Ge-Si alloys <80 nm gate-length Si0.7Ge0.3 n-MODFET, 194 GHz fmax>; S-parameters <80 nm gate-length Si/Si0.7Ge0.3 n-MODFET, 194 GHz fmax>; chemical vapour deposition <80 nm gate-length Si/Si0.7Ge0.3 n-MODFET, 194 GHz fmax>; high electron mobility transistors <80 nm gate-length Si/Si/0.7Ge0.3 n-MODFET, 194 GHz fmax>; isolation technology <80 nm gate-length Si/Si0.7Ge0.3 n-MODFET, 194 GHz fmax>; millimetre wave field effect transistors <80 nm gate-length Si/Si0.7Ge0.3 n-MODFET, 194 GHz fmax>; silicon <80 nm gate-length Si/Si0.7Ge0.3 n-MODFET, 194 GHz fmax>; 194 GHz; 80 nm; DC performance; RF performance; S-parameters; Si-Si0.7Ge0.3; lateral dimensions; lightly-doped p-type wafer; metallisation; planar shallow trench isolation; scaled n-channel MODFET; strained quantum well; transconductance characteristic; ultrahigh vacuum chemical vapour deposition; vertically-scaled layer structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031082
