DocumentCode
834132
Title
Optical phase-conjugate feedback effects on gain-guided diode laser characteristics
Author
Champagne, Yves ; McCarthy, Nathalie ; Tremblay, Réal
Author_Institution
Dept. of Phys., Laval Univ., Ste-Foy, Que., Canada
Volume
25
Issue
3
fYear
1989
fDate
3/1/1989 12:00:00 AM
Firstpage
595
Lastpage
601
Abstract
The effects of optical phase-conjugate feedback on the characteristics of stripe-geometry gain-guided GaAlAs lasers are theoretically investigated using a model based on the beam-propagation method. Compared to standard diode lasers, the use of a phase-conjugate mirror yields lower threshold currents and improves the optical quality of the output beam over a wide range of stripe widths and cavity lengths. The results obtained for 3 mu m stripe lasers are particularly noteworthy since the twin-peaked far field of standard lasers can become single lobed. Moreover, when one cleaved facet is replaced by a phase-conjugate mirror having the same overall reflectivity, the threshold current can be reduced by more than 50% for short cavity lengths.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical phase conjugation; semiconductor junction lasers; 3 micron; GaAlAs; III-V semi-conductor; beam-propagation method; cavity lengths; gain-guided diode laser characteristics; optical phase-conjugate feedback effects; output beam; phase-conjugate mirror; stripe lasers; stripe-geometry gain-guided GaAlAs lasers; threshold currents; twin-peaked far field; Diode lasers; Laser feedback; Laser modes; Mirrors; Nonlinear optics; Optical feedback; Optical mixing; Optical resonators; Phase change materials; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.18572
Filename
18572
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