A dual 4-bit 2-Gs/s full Nyquist analog-to-digital converter using a 70-ps silicon bipolar technology with borosenic-poly process and coupling-base implant

Author

Garuts, Valdis E. ; Yu, Yeou-chong Simon ; Traa, Einar O. ; Yamaguchi, Tadanori

Author_Institution

Tektronix Inc., Beaverton, OR, USA

Volume

24

Issue

2

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

216

Lastpage

222

Abstract

A dual 4-b analog-to-digital converter (ADC) with Nyquist operation to 2 gigasamples/second (Gs/s) and -29-dBc distortion at 1 GHz is presented. A novel evaluation method using an integral digital-to-analog converter is introduced. A trench-isolated, self-aligned, double-polysilicon bipolar process is used for the chip fabrication. This ADC has a resolution of 3.73 effective bits at 1-GHz analog input signal, without the use of a preceding sample-and-hold. Low-frequency untrimmed distortion is -48 dBc (not including quantizing error), and is independent of the sample rate of 2 Gs/s

Keywords

analogue-digital conversion; bipolar integrated circuits; elemental semiconductors; integrated circuit technology; silicon; 1 GHz; 1-GHz analog input signal; 2 GHz; 70 ps; ADC; Nyquist operation; Si; borosenic-poly process; chip fabrication; coupling-base implant; double poly-Si bipolar process; evaluation method; full Nyquist analog-to-digital converter; integral DAC; integral digital-to-analog converter; self-aligned; semiconductors; trench isolation; trench-isolated; untrimmed distortion; Analog-digital conversion; Chip scale packaging; Circuit testing; Encoding; Implants; Latches; Semiconductor device measurement; Signal resolution; Silicon; Switches;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.18579

Filename

18579