Author :
Chen, S.W. ; Lin, H.F. ; Sung, T.T. ; Wu, J.D. ; Kao, H.L. ; Chen, J.S.
Keywords :
III-V semiconductors <AlN thin films fabricated, Si and GaN, helicon sputtering syst., synthesis and SAW characts.>; X-ray diffraction <AlN thin films fabricated, Si and GaN, helicon sputtering syst., synthesis and SAW characts.>; aluminium compounds <AlN thin films fabricated, Si and GaN, helicon sputtering syst., synthesis and SAW characts.>; atomic force microscopy <AlN thin films fabricated, Si and GaN, helicon sputtering syst., synthesis and SAW characts.>; frequency response <AlN thin films fabricated, Si and GaN, helicon sputtering syst., synthesis and SAW characts.>; piezoelectric thin films <AlN thin films fabricated, Si and GaN, helicon sputtering syst., synthesis and SAW characts.>; sputter deposition <AlN thin films fabricated, Si and GaN, helicon sputtering syst., synthesis and SAW characts.>; sputtered coatings <AlN thin films fabricated, Si and GaN, helicon sputtering syst., synthesis and SAW characts.>; surface acoustic wave filters <AlN thin films fabricated, Si and GaN, helicon sputtering syst., synthesis and SAW characts.>; surface acoustic waves <AlN thin films fabricated, Si and GaN, helicon sputtering syst., synthesis and SAW characts.>; surface structure <AlN thin films fabricated, Si and GaN, helicon sputtering syst., synthesis and SAW characts.>; wide band gap semiconductors <AlN thin films fabricated, Si and GaN, helicon sputtering syst., synthesis and SAW characts.>; AlN; SAW characteristics; SAW filters; XRD patterns; atomic force microscopy; frequency response; helicon sputtering system; high quality films; highly textured surface; layered structure devices; piezoelectric films; sputtering synthesis; surface morphology; thin films;
