Title :
Measurement and modelling of power electronic devices at cryogenic temperatures
Author :
Forsyth, A.J. ; Yang, S.Y. ; Mawby, P.A. ; Igic, P.
Author_Institution :
Sch. of Electr. & Electron. Eng., Univ. of Manchester
fDate :
10/1/2006 12:00:00 AM
Abstract :
Practical results are used to parameterise a physically based, compact IGBT model for three generations of IGBT (PT, NPT and IGBT3), at temperatures extending down to 50 K. Full details are presented of the model parameter variations with temperature over the range 50-300 K. The models are then used to examine the performance of a sinusoidal pulse-width-modulated inverter leg at cryogenic temperatures
Keywords :
cryogenic electronics; insulated gate bipolar transistors; power semiconductor devices; semiconductor device measurement; semiconductor device models; 50 to 300 K; IGBT model; cryogenic temperatures; power electronic devices; sinusoidal pulse-width-modulated inverter leg;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20050359
