Title :
Critical spacing between emitter and base in InGaP heterojunction bipolar transistors (HBTs)
Author :
Chung-Er Huang ; Chien-Ping Lee ; Hsien-Chang Liang ; Ron-Ting Huang
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The influence of the spacing between the emitter and the base on the performance of InGaP heterojunction bipolar transistors (HBT) was experimentally studied. We found that the emitter to base spacing can be reduced to as small as 0.6 μm without causing a significant drop in the current gain. The reduction in emitter-to-base spacing, however, leads to improvement in high-frequency performance and device phase noise. For optimal dc, RF, and low-frequency noise performances, we have determined that a critical spacing of 0.6/spl sim/0.8 μm between the emitter and the base of an InGaP HBT is required.
Keywords :
III-V semiconductors; flicker noise; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; phase noise; semiconductor device measurement; semiconductor device noise; 0.6 to 0.8 micron; InGaP; InGaP HBTs; RF performance; current gain; emitter to base critical spacing; flicker noise; heterojunction bipolar transistors; high-frequency performance; ledge length; low-frequency noise performance; optimal dc performance; phase noise; 1f noise; Communications technology; Degradation; Gallium arsenide; Global communication; Heterojunction bipolar transistors; Low-frequency noise; Phase noise; Radio frequency; Surface resistance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.803758
