• DocumentCode
    834383
  • Title

    Area dependence of TDDB characteristics for HfO2 gate dielectrics

  • Author

    Kim, Young Hee ; Onishi, Katsunori ; Kang, Chang Seok ; Cho, Hag-Ju ; Nieh, Renee ; Gopalan, Sundar ; Choi, Rino ; Han, Jeong ; Krishnan, Siddarth ; Lee, Jack C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
  • Volume
    23
  • Issue
    10
  • fYear
    2002
  • Firstpage
    594
  • Lastpage
    596
  • Abstract
    Weibull slopes, area scaling factors, and lifetime projection have been investigated for both soft breakdown and hard breakdown for the first time, in order to gain a better understanding of, the breakdown mechanism of HfO/sub 2/ gate dielectrics. The Weibull slope /spl beta/ of the hard breakdown for both the area dependence and the time-to-dielectric-breakdown distribution was found to be /spl beta/ = 2, whereas that of the soft breakdown was about 1.4. Estimated ten-year lifetime has been projected to be -2 V.
  • Keywords
    MOS capacitors; Weibull distribution; dielectric thin films; electric breakdown; hafnium compounds; semiconductor device breakdown; semiconductor device reliability; sputtered coatings; 4.8 to 5 nm; HfO/sub 2/ gate dielectrics; HfO/sub 2/-Si; MOS capacitor; TDDB characteristics; Weibull slopes; area dependence; area scaling factors; breakdown mechanism; hard breakdown; lifetime projection; physical thickness; reactive dc magnetron sputtering; reliability; soft breakdown; ten-year lifetime; time-to-dielectric-breakdown distribution; Breakdown voltage; Dielectric breakdown; Dielectric materials; Dielectric measurements; Dielectric substrates; Electric breakdown; Hafnium oxide; Leakage current; MOS devices; Stress;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2002.803751
  • Filename
    1039178
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=834383