An experimental study on transport issues and electrostatics of ultrathin body SOI pMOSFETs

Author

Ren, Z. ; Hegde, S. ; Doris, B. ; Oldiges, P. ; Kanarsky, T. ; Dokumaci, O. ; Roy, R. ; Leong, M. ; Jones, E.C. ; Wong, H.-S Philip

Author_Institution

Microelectron. Div., IBM SRDC, Hopewell Junction, NY, USA

Volume

23

Issue

10

fYear

2002

Firstpage

609

Lastpage

611

Abstract

We present an experimental study of the transport properties (low field hole mobility μ/sub h/) and electrostatics (threshold voltage V/sub th/, and gate-to-channel capacitance C/sub gc/) of ultrathin body (UTB) SOI pMOSFETs using a large RingFet structure. Body thicknesses were /spl sim/4.3 nm to 50 nm. We find that 1) hole mobility decreases significantly as T/sub Si/<10 nm, and tends to show negligible dependence on the transverse electric field for extremely thin T/sub Si/ (<6 nm) and 2) a V/sub th/ shift of /spl sim/150 mV occurs over the studied T/sub Si/ range, accompanied by enhancement of weak inversion capacitance in thin body devices. Simulations were performed to provide insight into the experimental observations."

Keywords

MOSFET; capacitance; hole mobility; inversion layers; semiconductor device measurement; silicon-on-insulator; 4.3 to 50 nm; body thicknesses; electrostatics; gate-to-channel capacitance; large RingFet structure; low field hole mobility; simulations; threshold voltage; threshold voltage shift; transport issues; transverse electric field; ultrathin body SOI pMOSFETs; weak inversion capacitance enhancement; Capacitance measurement; Degradation; Electrostatics; Hardware; MOSFET circuits; Quantum mechanics; Scalability; Semiconductor films; Threshold voltage; Wafer bonding;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.803757

Filename

1039183