Title :
1300-V 6H-SiC lateral MOSFETs with two RESURF zones
Author :
Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.
Author_Institution :
Center for Power Electron. Syst., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A two-zone, lateral RESURF field 6H-SiC MOSFET with breakdown voltage as high as 1300 V and specific on-resistance of 160 m/spl Omega//spl middot/cm/sup 2/ has been fabricated. These MOSFETs exhibit stable and reversible breakdown indicating avalanche breakdown in SiC that has not been reported in earlier lateral SiC MOSFETs.
Keywords :
avalanche breakdown; power MOSFET; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 1300 V; 6H-SiC lateral MOSFETs; SiC; avalanche breakdown; breakdown voltage; power MOSFET; reduced surface field; specific on-resistance; stable reversible breakdown; two RESURF zones; two-zone lateral RESURF field MOSFET; Avalanche breakdown; Breakdown voltage; Doping; Electric breakdown; Implants; Logic devices; MOSFETs; Monolithic integrated circuits; Silicon carbide; Silicon devices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.803768
