Performance of silicon trigger counters in the Megarad range

Author

Beha, T. ; Dünnweber, W. ; Klein, P. ; Lutz, G.

Author_Institution

Sektion Phys., Munchen Univ., Garching, Germany

Volume

39

Issue

4

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

826

Lastpage

831

Abstract

The response of PIN diodes and of novel transistor-diode pixel counters of the DEPMOS type, capable of signal storage, to high radiation doses was studied by means of 10 MeV proton beams scattered from gold foils. The leakage current showed a more than proportional increase with increasing dose and an exponential dependence on temperature. The cooled PIN diodes remained operational at the highest dose of 17.6 Mrad. As specific radiation effects of the DEPMOS counter, incorporating a MOS transistor structure on a fully depleted bulk of 280-μm-thickness, shifts were observed of the transmission characteristics and a decrease of the acceptance period of the internal gate which allows for nondestructive read-out. Annealing at room temperature was studied for both detector types

Keywords

insulated gate field effect transistors; nuclear electronics; p-i-n diodes; proton detection and measurement; semiconductor counters; silicon; trigger circuits; 10 MeV; Au; DEPMOS type; MOS transistor; Megarad range; PIN diodes; Si; acceptance period; detector types; exponential dependence; fully depleted bulk; high radiation doses; internal gate; leakage current; nondestructive read-out; proportional increase; proton beams; radiation effects; room temperature; signal storage; transistor-diode pixel counters; transmission characteristics; trigger counters; Counting circuits; Gold; Leakage current; MOSFETs; Particle beams; Radiation detectors; Radiation effects; Scattering; Silicon; Temperature dependence;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.159715

Filename

159715