DocumentCode :
834573
Title :
Trapping Effects in Irradiated and Avalanche-Injected MOS Capacitors
Author :
Bakowski, M. ; Cockrum, R.H. ; Zamani, N. ; Maserjian, J. ; Viswanathan, C.R.
Author_Institution :
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91103
Volume :
25
Issue :
6
fYear :
1978
Firstpage :
1233
Lastpage :
1238
Abstract :
Avalanche-injection of holes and electrons into nonirradiated and irradiated MOS capacitors, respectively, were used to study hole traps in the SiO2. The trapping parameters for holes, and for electrons in the presence of trapped holes, were obtained in the range 10-14 - 10-13 cm2 for oxide thicknesses in the range 200 - 1000Ã…. A dominant bulk specie is determined to tail off from the Si/SiO2 interface with a characteristic distance of 150-200Ã… for dry oxide and approximately 400Ã… for wet oxide. The electron-injection is shown to be an effective probe of the trapped-hole distribution in the SiO2 after irradiation. The effect of electron compensation of trapped holes during irradiation had been included in the trapping kinetics. C-V shifts and interface state build-up near mid- band after irradiation were found, from irradiation experiments, to follow the same linear dependence on the integrated electron and hole flux crossing the Si/SiO2 interface.
Keywords :
Capacitance-voltage characteristics; Charge carrier processes; Electron traps; Interface states; Ionizing radiation; Kinetic theory; MOS capacitors; MOS devices; Probes; Tail;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1978.4329518
Filename :
4329518
Link To Document :
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