• DocumentCode
    834859
  • Title

    Ultra-low power precision ISFET readout using global current feedback

  • Author

    Premanode, B. ; Chan, W.P. ; Toumazou, C.

  • Author_Institution
    Inst. of Biomed. Eng., Imperial Coll. London
  • Volume
    42
  • Issue
    22
  • fYear
    2006
  • Firstpage
    1264
  • Lastpage
    1265
  • Abstract
    A solid-state chemical sensor ion sensitive field effect transistor (ISFET) that operates in weak inversion and interfaces with negative current feedback to maximise linearity is proposed. The power consumption of this circuit when operating in the weak inversion region is in the nanowatt range, which makes it suitable for biomedical applications
  • Keywords
    chemical sensors; ion sensitive field effect transistors; low-power electronics; readout electronics; biomedical applications; global current feedback; ion sensitive field effect transistor; negative current feedback; solid-state chemical sensor; weak inversion region;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20061690
  • Filename
    4015906
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=834859