DocumentCode :
834859
Title :
Ultra-low power precision ISFET readout using global current feedback
Author :
Premanode, B. ; Chan, W.P. ; Toumazou, C.
Author_Institution :
Inst. of Biomed. Eng., Imperial Coll. London
Volume :
42
Issue :
22
fYear :
2006
Firstpage :
1264
Lastpage :
1265
Abstract :
A solid-state chemical sensor ion sensitive field effect transistor (ISFET) that operates in weak inversion and interfaces with negative current feedback to maximise linearity is proposed. The power consumption of this circuit when operating in the weak inversion region is in the nanowatt range, which makes it suitable for biomedical applications
Keywords :
chemical sensors; ion sensitive field effect transistors; low-power electronics; readout electronics; biomedical applications; global current feedback; ion sensitive field effect transistor; negative current feedback; solid-state chemical sensor; weak inversion region;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20061690
Filename :
4015906
Link To Document :
بازگشت