Title :
Rigorous and efficient optical VCSEL model based on vectorial eigenmode expansion and perfectly matched layers
Author :
Bienstman, P. ; Baets, R.
Author_Institution :
Dept. of Inf. Technol. (INTEC), Ghent Univ./IMEC, Belgium
fDate :
8/1/2002 12:00:00 AM
Abstract :
A novel optical VCSEL model is presented, based on vectorial eigenmode expansion combined with perfectly matched layer (PML) boundary conditions. It is fully rigorous and computationally efficient, as the PML boundaries eliminate parasitic reflections and allow the metal discretisation wall to be placed much closer to the device under study. The model is illustrated with a number of simulation results on proton-implanted, airpost and oxide-confined VCSELs. The trade-off between tight transverse optical confinement and scattering loss is clearly illustrated
Keywords :
boundary-value problems; eigenvalues and eigenfunctions; ion implantation; semiconductor device models; semiconductor lasers; surface emitting lasers; vectors; airpost VCSELs; boundary conditions; efficient optical VCSEL model; metal discretisation wall; optical VCSEL model; oxide-confined VCSELs; parasitic reflections; perfectly matched layers; proton-implanted VCSELs; scattering loss; transverse optical confinement; vectorial eigenmode expansion;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20020547