Title :
DC-20 GHz CMOS LNA using novel multilayered transmission lines and inductors
Author :
Chirala, M.K. ; Guan, X. ; Nguyen, C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas A&M Univ., TX
Abstract :
A distributed low-noise amplifier (LNA) employing novel multilayered transmission lines and inductors is designed in a standard 0.18 mum CMOS process. The new LNA provides significant improvement in performance and size with less than 13 dB return loss from DC to 17 GHz, average gain of 8plusmn0.2 dB from DC to 20 GHz, noise figure of 3.4-5 dB from 0.5-19 GHz, power consumption of 34.2 mW, and 1.05times0.37 mm 2 chip size including RF pads
Keywords :
CMOS integrated circuits; MMIC amplifiers; distributed amplifiers; inductors; low noise amplifiers; transmission lines; 0.18 micron; 0.5 to 19 GHz; 20 GHz; 3.4 to 5 dB; 34.2 mW; CMOS; low-noise amplifier; multilayered inductors; multilayered transmission lines; power consumption;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062569
