Title :
Non-uniform carrier accumulation in optical confinement layer as ultimate power limitation in ultra-high-power broad-waveguide pulsed InGaAs/GaAs/AlGaAs laser diodes
Author :
Ryvkin, B. ; Avrutin, E.
Author_Institution :
A.F. Ioffe Physico-Tech. Inst., St.Petersburg
Abstract :
The effect of spatially non-uniform accumulation of carriers in the optical confinement layer of broad-waveguide InGaAs/GaAs/AlGaAs-based ultra-high power lasers operating at 1.06 mum under very high pulsed pumping has been analysed and shown to be an important limitation for the output power. A calculation using a semi-analytical theory is in good agreement with the recently published experimental data. A narrow asymmetric waveguide laser construction is predicted to alleviate the problem
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; indium compounds; optical pumping; semiconductor lasers; waveguide lasers; 1.06 micron; InGaAs-GaAs-AlGaAs; asymmetric waveguide laser construction; broad-waveguide pulsed laser diodes; nonuniform carrier accumulation; optical confinement layer; power limitation; ultra-high-power laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062162
