DocumentCode :
835086
Title :
High Temperature Schottky TTL Latchup
Author :
Cooper, M.S. ; Retzler, J.P. ; Messenger, G.C.
Author_Institution :
Litton Guidance & Control Systems Woodland Hills, California 91364
Volume :
25
Issue :
6
fYear :
1978
Firstpage :
1538
Lastpage :
1544
Abstract :
Selected devices of the low power and standard Schottky T2L family were radiation tested at elevated case temperatures to determine if there is a latchup susceptibility. No latchup was observed. Analysis of device circuit topology confirmed that the PNPN paths previously observed to latch in older devices had been redesigned and removed. Comparison was made to devices which did latchup in radiation tests. Case temperature is an important variable. Two devices were found which did not latch at room temperature but did latch at 100°C; two other devices showed a significantly lower latchup threshold at 110°C than at room temperature. This work emphasizes the necessity of performing latchup screens at worst case temperature and bias conditions.
Keywords :
Circuit testing; Control systems; Doping; Gold; Latches; P-n junctions; Schottky barriers; Schottky diodes; Temperature distribution; Thyristors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1978.4329568
Filename :
4329568
Link To Document :
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