Title :
AlxGa1-xN=GaN tuned distributed Bragg reflector
Author :
Shi, W. ; Feng, Y. ; Chen, H.
Author_Institution :
Optoelectron. Inst. of Shenzhen Univ.
Abstract :
A novel design scheme of a tuned distributed Bragg reflector (TDBR) is presented. The layer thicknesses of 20.5-pair AlxGa 1-xN/GaN distributed reflectors was optimised by the hybrid simulated-annealing genetic algorithm for achieving highest omnidirectional reflectance. The omnidirectional reflectance of the TDBR is much higher than that of a DBR and the highest omnidirectional reflectance of the TDBR is tuned to the central wavelength from which the DBR deviates
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium compounds; genetic algorithms; reflectivity; simulated annealing; AlGaN-GaN; TDBR; distributed reflectors; omnidirectional reflectance; simulated-annealing genetic algorithm; tuned distributed Bragg reflector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062802
