• DocumentCode
    835205
  • Title

    Room-temperature intersubband emission of GaN/AlN quantum wells at λ=2.3 μm

  • Author

    Nevou, L. ; Julien, F.H. ; Colombelli, R. ; Guillot, F. ; Monroy, E.

  • Author_Institution
    OptoGaN Dept., Inst. d´´Electronique Fondamentale, Orsay
  • Volume
    42
  • Issue
    22
  • fYear
    2006
  • Firstpage
    1308
  • Lastpage
    1309
  • Abstract
    Optically-pumped intersubband emission of GaN/AlN quantum wells at room temperature has been experimentally demonstrated for the first time. The peak emission wavelength is at lambda=2.3 mum. It is the shortest value ever reported for an intersubband device
  • Keywords
    III-V semiconductors; aluminium compounds; excited states; gallium compounds; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; 2.3 micron; GaN-AlN; intersubband device; intersubband emission; peak emission wavelength; quantum wells;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20062282
  • Filename
    4015934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=835205