DocumentCode :
83551
Title :
A Phase-Change Via-Reconfigurable CMOS 
VCO
Author :
Cheng-Yuan Wen ; Slovin, Gregory ; Bain, James A. ; Schlesinger, T.E. ; Pileggi, L.T. ; Paramesh, Jeyanandh
Author_Institution :
Electr. & Comput. Eng. Dept., Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume :
60
Issue :
12
fYear :
2013
fDate :
Dec. 2013
Firstpage :
3979
Lastpage :
3988
Abstract :
This paper demonstrates the efficacy of phase-change (PC) vias in reconfiguring RF front-end circuits for multiband/multi-standard operation. Constructed using two series-connected (SC) GeTe vias, a PC switch can be reversibly transformed between a high ROFF state and a low RON state within 1 μs. Using such PC switches to switch the inductor in a resonator, two LC voltage-controlled oscillators (VCOs) based on: 1) a SC and 2) a coupling-controlled (CC) resonator are developed. Designed and fabricated in 0.13- μm CMOS in conjunction with an in-house GeTe process, the VCOs can switch their operating frequency over widely separated bands. Wide tuning ranges of 2.89-4.23/(4.93-7.79) and 4.80-8.53/(5.28-10.20) GHz were achieved in the off/on state for the SC/(CC) VCOs. The measured phase noise over the entire tuning range was lower than -103.4 and -102.7 dBc/Hz, at a 1-MHz offset frequency, respectively.
Keywords :
CMOS integrated circuits; germanium compounds; phase change materials; radiofrequency integrated circuits; reconfigurable architectures; tuning; vias; voltage-controlled oscillators; CC resonator; GeTe; LC VCO; LC voltage-controlled oscillators; PC switch; RF front-end circuits; SC vias; SC-CC VCO; bandwidth 2.89 GHz to 7.79 GHz; bandwidth 4.80 GHz to 10.20 GHz; coupling-controlled resonator; frequency 1 MHz; multiband-multistandard operation; phase-change via-reconfigurable CMOS LC VCO; series-connected vias; size 0.13 mum; wide tuning; Capacitors; Inductors; Q-factor; Switches; Switching circuits; Tuning; Voltage-controlled oscillators; CMOS; GeTe; RF; phase-change (PC) material; switch and $LC$ voltage-controlled oscillator (VCO);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2283849
Filename :
6656905
Link To Document :
