Silicon substrates with buried distributed Bragg reflectors for resonant cavity-enhanced optoelectronics

Author

Emsley, Matthew K. ; Dosunmu, Olufemi ; Ünlü, M. Selim

Author_Institution

Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA

Volume

8

Issue

4

fYear

2002

Firstpage

948

Lastpage

955

Abstract

We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides a 90% reflecting surface. We have fabricated resonant cavity-enhanced Si photodetectors with 40% quantum efficiency at 860 nm and a full-width at half-maximum of 29 ps suitable for 10 Gbps data communications. We have also implemented double-SOI substrates with 90% reflectivity covering 1300 and 1550 nm for use in Si-based optoelectronics.

Keywords

SIMOX; chemical mechanical polishing; dark conductivity; integrated optics; ion implantation; mirrors; optical fabrication; optical resonators; oxidation; photodetectors; silicon; silicon-on-insulator; 1300 nm; 1550 nm; 29 ps; 40 percent; 860 nm; DBR; Si-based optoelectronics; buried DBR; buried distributed Bragg reflectors; commercially reproducible silicon wafer; data communications; double silicon-on-insulator process; double-SOI substrates; full-width at half-maximum; high-reflectance buried distributed Bragg reflector; quantum efficiency; reflecting surface.; reflectivity; resonant cavity-enhanced Si photodetectors; resonant cavity-enhanced optoelectronics; silicon substrates; Absorption; Distributed Bragg reflectors; Government; Optical refraction; Optical resonators; Photodetectors; Reflectivity; Resonance; Silicon on insulator technology; Substrates;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2002.801692

Filename

1039487