DocumentCode :
83583
Title :
Study of High- 
/Metal-Gate Work Function Variation in FinFET: The Modified RGG Concept
Author :
Hyohyun Nam ; Changhwan Shin
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Seoul, Seoul, South Korea
Volume :
34
Issue :
12
fYear :
2013
fDate :
Dec. 2013
Firstpage :
1560
Lastpage :
1562
Abstract :
Because the existing ratio of average grain size to gate area (RGG) method is not applicable for calculating the work function variation (WFV) in nonplanar device structures, a modified RGG method is used to quantitatively estimate the WFV in a high-k/metal-gate (HK/MG) FinFET. A plot of the calculated WFV against the RGG for the FinFET with a TiN gate-stack is validated by previous simulation results. The standard deviation of the WFV, σ(WFV), of the nonplanar multigate device structure (e.g., the FinFET) is lower than that of a planar device structure by ~30%.
Keywords :
MOSFET; high-k dielectric thin films; work function; RGG concept; TiN gate-stack; WFV; gate area; grain size; high-k-metal-gate FinFET; high-k-metal-gate work function; nonplanar device structures; nonplanar multigate device structure; standard deviation; work function variation; FinFETs; Grain size; High K dielectric materials; Logic gates; Titanium compounds; CMOS; Characterization; FinFET; MOSFET; ratio of average grain size to gate area (RGG); variability; work function variation (WFV);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2287283
Filename :
6656908
Link To Document :
